EXTERNAL-BEAM SWITCHING IN MONOLITHIC BISTABLE GAAS QUANTUM-WELL ETALONS

被引：30

作者：

SFEZ, BG

OUDAR, JL

MICHEL, JC

KUSZELEWICZ, R

AZOULAY, R

机构：

[1] Centre National d'Etudes des Télécommunications, 92 220 Bagneux

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monolithic bistable étalons with a GaAs/Al0.3Ga 0.7As multiple quantum well active layer and AlAs/Al 0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. They exhibit a very good memory effect. Experiments with an additional external beam at the same and at a different wavelength have been performed. They demonstrated thresholding, pulse shaping, amplification, and wavelength conversion. Moreover, the use of a diode laser external beam showed the possibility of controlling an intense beam with a weaker beam. We describe an experimental configuration in the reflection mode and at normal incidence, which allows mixing the two input beams and extracting the output beam with an ideal 100% efficiency.

引用

页码：1849 / 1851

页数：3

共 10 条

[1]

[Anonymous], 1985, OPTICAL BISTABILITY

[2] SINGLE-CRYSTAL, EPITAXIAL MULTILAYERS OF ALAS, GAAS, AND ALXGA1-XAS FOR USE AS OPTICAL INTERFEROMETRIC ELEMENTS [J].