SEMICONDUCTOR 1.55 MU-M LASER SOURCE WITH GIGABIT 2ND INTEGRATED ELECTROABSORPTIVE MODULATOR

被引：28

作者：

ZHANG, LM ^{[1
]}

CARROLL, JE ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 11期

关键词：

D O I：

10.1109/3.333709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.55 mum laser source with low chirp and high speed can be achieved when a single-mode DFB laser is modulated by an integrated quantum-confined Stark effect electroabsorptive modulator. The dynamic characteristics of such a device are simulated by a time domain, large signal dynamic model. The simulation desmonstrates that the frequency chirp has two components: 1) changes of the refractive index induced by variation of the absorption coefficient during the modulation and 2) changes in the lasing frequency caused by changes in the effective residual facet reflection as the external modulator is switched on and off. Optimization by choice of the operating wavelength and coupling coefficient in the lasing section is discussed.

引用

页码：2573 / 2577

页数：5

共 21 条

[1] MODULATION PERFORMANCE OF A SEMICONDUCTOR-LASER COUPLED TO AN EXTERNAL HIGH-Q RESONATOR [J].