POINT-DEFECTS IN GAAS STUDIED BY CORRELATED POSITRON LIFETIME, OPTICAL, AND ELECTRICAL MEASUREMENTS .2. POINT-DEFECTS IN GAAS IRRADIATED WITH FAST-NEUTRONS

被引:14
作者
DLUBEK, G [1 ]
DLUBEK, A [1 ]
KRAUSE, R [1 ]
BRUMMER, O [1 ]
机构
[1] MARTIN LUTHER UNIV,SEKT PHYS,DDR-4020 HALLE,GER DEM REP
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 107卷 / 01期
关键词
D O I
10.1002/pssa.2211070110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:111 / 121
页数:11
相关论文
共 34 条
[1]  
[Anonymous], 1983, POSITRON SOLID STATE
[2]   LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD [J].
ARNOLD, GW .
PHYSICAL REVIEW, 1969, 183 (03) :777-&
[3]  
BAUERLEIN R, 1968, FESTKORPERPROBLEME V
[4]   RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT [J].
BIREY, H ;
SITES, J .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :619-634
[5]  
BOCHKAREV SE, 1981, FIZ TVERD TELA+, V23, P211
[6]  
BROOK H, 1959, J APPL PHYS, V8, P1118
[7]   OPTICAL AND ELECTRICAL EFFECTS OF HIGH-CONCENTRATIONS OF DEFECTS IN IRRADIATED CRYSTALLINE GALLIUM-ARSENIDE [J].
COATES, R ;
MITCHELL, EWJ .
ADVANCES IN PHYSICS, 1975, 24 (05) :593-644
[8]  
CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294
[9]   TEMPERATURE-DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIES [J].
DANNEFAER, S ;
KUPCA, S ;
HOGG, BG ;
KERR, DP .
PHYSICAL REVIEW B, 1980, 22 (12) :6135-6139
[10]   POSITRON-LIFETIME STUDY OF VACANCY ANNEALING IN NEUTRON-IRRADIATED GAAS [J].
DLUBEK, G ;
KRAUSE, R ;
BRUMMER, O ;
TITTES, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (02) :125-127