MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON

[1] BAUMGART H, 1983, I PHYSICS C SERIES, V67, P4

[2] BEALE MIJ, 1984, 3RD INT C MOL BEAM E

[3] BILENKO DI, 1983, SOV PHYS SEMICOND+, V17, P1336

[4] HARDEMAN R, 1983, SURF SCI

[5] IMAI K, 1981, P INT ELECTRON DEVIC, P376

[6] MANO T, 1982, S VERY LARGE SCALE I, P12

[7] PICKERING C, 1984, 6TH INT C THIN FILMS

[8] Sze SM, 1981, PHYSICS SEMICONDUCTO, P250

[9] ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) : 402 - 408

[10] FORMATION MECHANISM OF POROUS SILICON LAYER BY ANODIZATION IN HF SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 476 - 483

[1] BAUMGART H, 1983, I PHYSICS C SERIES, V67, P4

[2] BEALE MIJ, 1984, 3RD INT C MOL BEAM E

[3] BILENKO DI, 1983, SOV PHYS SEMICOND+, V17, P1336

[4] HARDEMAN R, 1983, SURF SCI

[5] IMAI K, 1981, P INT ELECTRON DEVIC, P376

[6] MANO T, 1982, S VERY LARGE SCALE I, P12

[7] PICKERING C, 1984, 6TH INT C THIN FILMS

[8] Sze SM, 1981, PHYSICS SEMICONDUCTO, P250

[9] ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) : 402 - 408

[10] FORMATION MECHANISM OF POROUS SILICON LAYER BY ANODIZATION IN HF SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 476 - 483