WAVELENGTH SELECTIVE DETECTION USING EXCITONIC RESONANCES IN MULTIQUANTUM-WELL STRUCTURES

被引:5
作者
GOSWAMI, S
BHATTACHARYA, P
SINGH, J
机构
[1] Solid State Electroncs Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI
关键词
Optical Communication Equipment - Photoelectricity - Semiconducting Gallium Arsenide - Semiconducting Indium Compounds - Signal Detection;
D O I
10.1109/3.83317
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The wavelength and voltage dependence of photocurrent near excitonic resonances is used to study the wavelength selectivity of p-i(MQW)-n photodiode structures with a parallel sequence of optical bits, each with a different wavelength. The selectivity is considered good if the state of a lambda-i wavelength bit can be detected regardless of lamda-j(j not-equal i) state of the bits. Photocurrent is found to have very good selectivity only if lambda-j bits are all zero, i.e., the optical information is serial, but we find that differential photocurrent (DELTA-I(ph)/DELTA-V) provides a good selectivity for random states of lambda-j bits (i.e., parallel input). Four channel selectivity is demonstrated at 200 K. Specially designed quantum-well structures can greatly improve this selectivity.
引用
收藏
页码:875 / 877
页数:3
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