DETAILED BALANCE AND PHONON-ASSISTED STICKING IN ADSORPTION AND DESORPTION OF H-2/SI

被引：54

作者：

BRENIG, W ^{[1
]}

GROSS, A ^{[1
]}

RUSS, R ^{[1
]}

机构：

[1] FRITZ HABER INST, D-14195 BERLIN, GERMANY

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1994年 / 96卷 / 02期

关键词：

D O I：

10.1007/BF01313289

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent experimental results on the desorption of D-2 from Si show practically no translational heating indicating a low barrier for adsorption. This seems to be at variance with the extremely low sticking coefficient found in adsorption experiments indicating a very high barrier. In order to understand this apparent discrepancy we consider a simple model of local lattice relaxation allowing for different barriers in adsorption and desorption processes. After taking the dynamics of this relaxation into account it turns out that detailed balance ''in principle'' is valid. ''In practice'', however, it can not be applied for very large energy releases from lattice distortions. Our model predicts very strong phonon assisted sticking.

引用

页码：231 / 234

页数：4

共 14 条

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