CHARACTERIZATION OF HIGHLY CONDUCTING PBO-DOPED CD2SNO4 THICK-FILMS

The factors contributing to the high conductivity of doped thick films of Cd//2SnO//4 were identified and their influence on the character of the films is explained. The dopant induction is through the glass and is effected after the film deposition. The films with dopant concentrations of 0. 066-3. 3 wt. % were fired at 500-900 degree C. All the samples have orthorhombic crystal structure. The lattice parameters and unit cell volume varied with the preparation conditions. The Burstein effect was observed in these films for the first time. The optical absorption edge shifted towards the UV region, from 534 to 514 nm. The apparent band gap increased from 2. 32 to 2. 41 ev. Dopant oxidation and structural defects such as oxygen vacancies and cadmium interstitials contributed to the conductivity as did the apparent increase in carrier mobility.