ATTENUATION COMPENSATION IN DISTRIBUTED-AMPLIFIER DESIGN

被引：39

作者：

DEIBELE, S ^{[1
]}

BEYER, JB ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT ELECT & COMP ENGN,MADISON,WI 53706

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 09期

关键词：

D O I：

10.1109/22.32227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1425 / 1433

页数：9

共 14 条

[1] A MONOLITHIC GAAS 1-13-GHZ TRAVELING-WAVE AMPLIFIER [J].

AYASLI, Y ;

MOZZI, RL ;

VORHAUS, JL ;

REYNOLDS, LD ;

PUCEL, RA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :976-981

[2] MONOLITHIC 2-20 GHZ GAAS TRAVELING-WAVE AMPLIFIER [J].

AYASLI, Y ;

REYNOLDS, LD ;

VORHAUS, JL ;

HANES, L .

ELECTRONICS LETTERS, 1982, 18 (14) :596-598

[3] A 2-20 GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED-AMPLIFIER [J].

BANDY, SG ;

NISHIMOTO, CK ;

YUEN, C ;

LARUE, RA ;

DAY, M ;

ECKSTEIN, J ;

TAN, ZCH ;

WEBB, C ;

ZDASIUK, GA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1494-1500

[4] ON GAIN-BANDWIDTH PRODUCT FOR DISTRIBUTED-AMPLIFIERS [J].

BECKER, RC ;

BEYER, JB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (06) :736-738

[5] MESFET DISTRIBUTED-AMPLIFIER DESIGN GUIDELINES [J].

BEYER, JB ;

PRASAD, SN ;

BECKER, RC ;

NORDMAN, JE ;

HOHENWARTER, GK .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) :268-275

[6]

BEYER JB, 1983, ECE836 U WISC MAD

[7]

CHASE EM, 1986 IEEE MTTS INT M, P811

[8]

KEENAN W, 1984, IEEE T ELECTRON DEV, V31, P1926

[9]

Kim B., 1985, IEEE 1985 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.85CH2191-5), P35

[10] 0.5 W 2-21 GHZ MONOLITHIC GAAS DISTRIBUTED-AMPLIFIER [J].

KIM, B ;

TSERNG, HQ .

ELECTRONICS LETTERS, 1984, 20 (07) :288-289

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