IMPURITY CONCENTRATION EFFECTS ON RADIATION DEFECT INTRODUCTION IN INP EXAMINED BY INSITU MEASUREMENT

被引：4

作者：

YAMAGUCHI, M

YAMAMOTO, A

UEMURA, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 10期

关键词：

D O I：

10.1143/JJAP.23.L788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L788 / L790

页数：3

共 7 条

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[2]

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[4] RADIATION-DAMAGE IN INP SINGLE-CRYSTALS AND SOLAR-CELLS [J].

YAMAGUCHI, M ;

UEMURA, C ;

YAMAMOTO, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1429-1436

[5] CARRIER CONCENTRATION EFFECTS ON RADIATION-DAMAGE IN INP [J].

YAMAGUCHI, M ;

ANDO, K ;

UEMURA, C .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3160-3162

[6] MINORITY-CARRIER INJECTION ANNEALING OF ELECTRON IRRADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS [J].

YAMAGUCHI, M ;

ANDO, K ;

YAMAMOTO, A ;

UEMURA, C .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :432-434

[7] HIGH CONVERSION EFFICIENCY AND HIGH RADIATION-RESISTANCE INP HOMOJUNCTION SOLAR-CELLS [J].

YAMAMOTO, A ;

YAMAGUCHI, M ;

UEMURA, C .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :611-613

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