7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE

[1] THE SI(111) 7X7 TO 1X1 TRANSITION [J]. SURFACE SCIENCE, 1981, 104 (01) : 74 - 104

[2] TUNNELING THROUGH A CONTROLLABLE VACUUM GAP [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 178 - 180

[3] BINNIG G, UNPUB

[4] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61

[5] CARDILLO MJ, 1982, CHEM PHYS, V21, P54

[6] Chadi D. J., 1980, Journal of the Physical Society of Japan, V49, P1035

[7] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2043 - 2046

[8] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[9] THE SURFACE PROFILE OF CHARGE OF SI(111)(7 X 7) OBTAINED WITH HE SCATTERING [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (07) : 719 - 723

[10] SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19

[1] THE SI(111) 7X7 TO 1X1 TRANSITION [J]. SURFACE SCIENCE, 1981, 104 (01) : 74 - 104

[2] TUNNELING THROUGH A CONTROLLABLE VACUUM GAP [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 178 - 180

[3] BINNIG G, UNPUB

[4] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61

[5] CARDILLO MJ, 1982, CHEM PHYS, V21, P54

[6] Chadi D. J., 1980, Journal of the Physical Society of Japan, V49, P1035

[7] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2043 - 2046

[8] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[9] THE SURFACE PROFILE OF CHARGE OF SI(111)(7 X 7) OBTAINED WITH HE SCATTERING [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (07) : 719 - 723

[10] SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19