COMPARISON BETWEEN ATMOSPHERIC AND REDUCED PRESSURE GAAS MOCVD

被引:14
作者
KOBAYASHI, N
FUKUI, T
HORIKOSHI, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期
关键词
D O I
10.1143/JJAP.21.L705
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L705 / L706
页数:2
相关论文
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  • [1] BHAT R, 1982, I PHYS C SER, V63, P101
  • [2] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
    DAPKUS, PD
    MANASEVIT, HM
    HESS, KL
    LOW, TS
    STILLMAN, GE
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23
  • [3] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
    NAKANISI, T
    UDAGAWA, T
    TANAKA, A
    KAMEI, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 255 - 262
  • [4] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS
    STRINGFELLOW, GB
    LINNEBACH, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2212 - 2217