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COMPARISON BETWEEN ATMOSPHERIC AND REDUCED PRESSURE GAAS MOCVD
被引:14
作者
:
KOBAYASHI, N
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, N
FUKUI, T
论文数:
0
引用数:
0
h-index:
0
FUKUI, T
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1982年
/ 21卷
/ 11期
关键词
:
D O I
:
10.1143/JJAP.21.L705
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L705 / L706
页数:2
相关论文
共 4 条
[1]
BHAT R, 1982, I PHYS C SER, V63, P101
[2]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[3]
GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
NAKANISI, T
UDAGAWA, T
论文数:
0
引用数:
0
h-index:
0
UDAGAWA, T
TANAKA, A
论文数:
0
引用数:
0
h-index:
0
TANAKA, A
KAMEI, K
论文数:
0
引用数:
0
h-index:
0
KAMEI, K
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 255
-
262
[4]
PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
STRINGFELLOW, GB
LINNEBACH, R
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
LINNEBACH, R
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(04)
: 2212
-
2217
←
1
→
共 4 条
[1]
BHAT R, 1982, I PHYS C SER, V63, P101
[2]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[3]
GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
NAKANISI, T
UDAGAWA, T
论文数:
0
引用数:
0
h-index:
0
UDAGAWA, T
TANAKA, A
论文数:
0
引用数:
0
h-index:
0
TANAKA, A
KAMEI, K
论文数:
0
引用数:
0
h-index:
0
KAMEI, K
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 255
-
262
[4]
PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
STRINGFELLOW, GB
LINNEBACH, R
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER
LINNEBACH, R
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(04)
: 2212
-
2217
←
1
→