THEORY OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR ELECTRODES WITH INTERFACE STATES

被引：39

作者：

NOGAMI, G

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期

关键词：

D O I：

10.1149/1.2108613

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：525 / 531

页数：7

共 31 条

[1] CHARACTERIZATION OF MULTIPLE DEEP LEVEL SYSTEMS IN SEMICONDUCTOR JUNCTIONS BY ADMITTANCE MEASUREMENTS [J].

BEGUWALA, M ;

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :203-214

[2] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[3] MOTT-SCHOTTKY PLOTS AND FLAT-BAND POTENTIALS FOR SINGLE-CRYSTAL RUTILE ELECTRODES [J].

COOPER, G ;

TURNER, JA ;

NOZIK, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :1973-1977

[4] SEMICONDUCTOR ELECTRODES .2. ELECTROCHEMISTRY AT N-TYPE TIO2 ELECTRODES IN ACETONITRILE SOLUTIONS [J].

FRANK, SN ;

BARD, AJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1975, 97 (26) :7427-7433

[5]

GERISCHER H, 1960, Z PHYS CHEM NF, V26, P326

[6]

Gerischer H., 1961, Z PHYS CHEM, V27, P48

[7]

GERISCHER H, 1960, Z PHYSIK CHEM FRANKF, V26, P223

[8] CHARACTERIZED SEMICONDUCTOR ELECTRODES .2. ROOM-TEMPERATURE DIFFUSION IN A SINGLE-CRYSTAL RUTILE ELECTRODE [J].

HARRIS, LA ;

GERSTNER, ME ;

WILSON, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :850-855

[9] THERMODYNAMIC AND PHOTO-ELECTROCHEMICAL BEHAVIOR OF THE NORMAL-TIO2 ELECTRODE IN FLUORIDE-CONTAINING SOLUTIONS [J].

HEPEL, T ;

HEPEL, M ;

OSTERYOUNG, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2132-2141

[10] THE STRUCTURES AND ELECTROCHEMICAL REACTIONS OF INSERTION COMPOUNDS [J].

JACOBSON, AJ .

SOLID STATE IONICS, 1981, 5 (OCT) :65-70

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