A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS

被引：234

作者：

CALDAS, MJ

FAZZIO, A

ZUNGER, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：671 / 673

页数：3

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