THRESHOLD VOLTAGE SHIFT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS DURING PULSE OPERATION

被引：23

作者：

ORITSUKI, R

HORII, T

SASANO, A

TSUTSUI, K

KOIZUMI, T

KANEKO, Y

TSUKADA, T

机构：

[1] HITACHI LTD,MUSASHINO WORKS,KOKUBUNJI,TOKYO 185,JAPAN

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

AMORPHOUS SILICON; THIN-FILM TRANSISTOR; THRESHOLD VOLTAGE SHIFT; PULSE VOLTAGE; DC VOLTAGE; RELIABILITY; GATE INSULATOR;

D O I：

10.1143/JJAP.30.3719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threshold voltage shift of amorphous silicon thin film transistors (TFT's) under pulse operation is discussed. The stress time, stress voltage, duty ratio and frequency dependence of the shift have been measured. A positive voltage stress causes a constant shift, when the frequency is in the range from DC to over 100 kHz. On the other hand, the shift under a negative pulse stress depends on its repetition frequency and its pulse width and can be described by an equivalent circuit model. Based on these data, a more reliable estimate of the long-term reliability of an amorphous silicon TFT panel has been realized.

引用

页码：3719 / 3723

页数：5

共 5 条

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