PECULIARITIES OF THE DC CONDUCTIVITY OF THIN AMORPHOUS AS-SE LAYERS AFTER C+ IMPLANTATION

Thin amorphous As2Se3, As3Se2, and AsSe layers are implanted with C+ at doses of D = 1 x 10(16) to 2 x 10(17) cm(-2). The de conductivity is measured and thermal activation energy is determined. Up to D = 1x10(17) cm(-2) carbon, essential changes are not observed. This is ascribed to gradual formation of nanoclusters of amorphous carbon which do not alter substantially the conductivity. After reaching a dose of implanted carbon of D = 2 x 10(17) cm(-2), chain structures are formed on the basis of carbon nanoclusters. It is assumed that these structures are the reason for a drastic increase in the de conductivity. The transport mechanism of the charge carriers is the characteristic one for chalcogenide thin layers, i.e. hopping conductivity.