IR, ESCA and Auger analysis of thermally hydrogenated a-Si:H thin films

被引:4
作者
Essa, IM
Essa, AA
Makadsi, MN
机构
[1] Department of Physics, College of Science, University of Baghdad, Jaderiya
关键词
D O I
10.1016/0927-0248(95)00035-6
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Hydrogenated amorphous silicon thin films have been prepared by thermal evaporation. IR investigations showed the existence of all expected Si-H. The electron spectroscopy for chemical analysis exhibited the existence of oxygen and carbon atoms on the silicon surface which led to a shift in the Si2p core level. Auger spectroscopy also exhibited a peak shift in the kinetic energy. Both shifts are interpreted on the bases of the environmental change in the amorphous structure.
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页码:19 / 25
页数:7
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