INGAAS PIN PHOTODIODE FABRICATED ON SEMI-INSULATING INP SUBSTRATE FOR MONOLITHIC INTEGRATION

被引：18

作者：

LI, K

REZEK, E

LAW, HD

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 05期

关键词：

D O I：

10.1049/el:19840130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：196 / 198

页数：3

共 8 条

[1] LOW DARK-CURRENT, HIGH-GAIN GAINAS-INP AVALANCHE PHOTODETECTORS [J].

DIADIUK, V ;

GROVES, SH ;

HURWITZ, CE ;

ISELER, GW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :260-264

[2]

KASAHARA K, 1983, 4TH INT C INT OPT OP, P188

[3] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J].

LAW, HD ;

NAKANO, K ;

TOMASETTA, LR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :549-558

[4] VERY-HIGH-SPEED BACK-ILLUMINATED INGAAS-INP PIN PUNCH-THROUGH PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA ;

OGAWA, K ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (12) :431-432

[5] CHARACTERIZATION OF IN0.53GA0.47AS PHOTO-DIODES EXHIBITING LOW DARK CURRENT AND LOW JUNCTION CAPACITANCE [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED ;

DEWINTER, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :227-231

[6]

NAHORY RC, 1982, INTEGRATED GUIDED WA

[7]

NICKEL H, 1983, J OPT COMMUN, V2, P63

[8] LOW-LEAKAGE, HIGH-EFFICIENCY, RELIABLE VPE INGAAS 1.0-1.7 MU-M PHOTO-DIODES [J].

OLSEN, GH .

ELECTRON DEVICE LETTERS, 1981, 2 (09) :217-219

← 1 →