INFRARED REFLECTIVITY OF HEAVILY DOPED LOW-MOBILITY SEMICONDUCTORS .I. GAAS

[1] BROOKS H, 1955, ADVANCES ELECTRONICS, V7, P136

[2] KESAMANLY FP, 1966, PHYS STATUS SOLIDI, V13, pK120

[3] MURRAY L, 1966, OCT EL SOC M PHIL

[4] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 106 (05): : 882 - 890

[1] BROOKS H, 1955, ADVANCES ELECTRONICS, V7, P136

[2] KESAMANLY FP, 1966, PHYS STATUS SOLIDI, V13, pK120

[3] MURRAY L, 1966, OCT EL SOC M PHIL

[4] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 106 (05): : 882 - 890