GIANT HALL-EFFECT IN PERCOLATING FERROMAGNETIC GRANULAR METAL-INSULATOR FILMS

被引：195

作者：

PAKHOMOV, AB

YAN, X

ZHAO, B

机构：

[1] Department of Physics, Hong Kong University of Science and Technology, Kowloon, Clear Water Bay

[2] A.F. Ioffe Physical Technical Institute

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied both the resistivity and the Hall resistivity of cosputtered granular Ni-SiO2 films with the metal volume fraction x in the range of 0.5-1.0. Near the metal-insulator transition, or x of about 0.53-0.61, the saturated value of the Hall resistivity was up to 2 X 10(-4) Omega cm. This value is almost 4 orders of magnitude greater than that of pure nickel. Both the resistivity and the Hall resistivity varied weekly with temperature, throughout the range of 5-300 K. We suggest that the percolating ferromagnetic granular metal films can be an alternative candidate material for high sensitivity Hall sensors. (C) 1995 American Institute of Physics.

引用

页码：3497 / 3499

页数：3

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