BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON

被引:348
作者
SAKAI, S
UETA, Y
TERAUCHI, Y
机构
[1] Department of Electrical and Electronic Engineering, Tokushima University, Tokushima, 110, Minami-osanjima
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期
关键词
NITRIDE; III-V-ALLOY; BLUE-LIGHT-EMITTING DEVICE; BAND GAP ENERGY; TERNARY ALLOY; QUATERNARY ALLOY; GAN; INGAN;
D O I
10.1143/JJAP.32.4413
中图分类号
O59 [应用物理学];
学科分类号
摘要
The band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively. The alloys including N are predicted to have negative band gap energy in most of the compositional range due to the large electro- negativity of nitrogen atom. Possible material combinations for a lattice-matched doubleheterostructure for blue-light-emitting devices are discussed. The chart presented here will be useful in designing blue-to-ultraviolet light emitters with and without strain in the devices.
引用
收藏
页码:4413 / 4417
页数:5
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