EVIDENCE FOR EXISTENCE OF ANTISTRUCTURE DEFECTS IN BISMUTH TELLURIDE BY DENSITY MEASUREMENTS

被引:215
作者
MILLER, GR
LI, CY
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D O I
10.1016/0022-3697(65)90084-3
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O6 [化学];
学科分类号
0703 ;
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页码:173 / &
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共 17 条
[1]   GALVANOMAGNETIC STUDIES OF DEGENERATE GALLIUM-DOPED GERMANIUM - NONPARABOLIC ENERGY BANDS WITH VARIABLE WARPING [J].
BERNARD, W ;
STRAUB, WD ;
ROTH, H .
PHYSICAL REVIEW, 1963, 132 (01) :33-&
[2]   DEVIATIONS FROM STOICHIOMETRY AND ELECTRICAL PROPERTIES IN SNTE [J].
BREBRICK, RF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :27-&
[3]   GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GROVES, RD ;
WOLFE, R .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459) :430-443
[4]   CHEMICAL BONDING IN BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GOODMAN, CHL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :142-144
[5]   GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE [J].
DRABBLE, JR .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465) :380-390
[6]   STRUCTURE-CELL DATA AND EXPANSION COEFFICIENTS OF BISMUTH TELLURIDE [J].
FRANCOMBE, MH .
BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (10) :415-417
[7]  
Goldsmid H. J., 1960, P 5 INT C PHYS SEM, P1015
[8]  
HARMAN TC, 1955, B AM PHYS SOC, V30, P35
[9]  
Hodgkinson R.J., 1956, J ELECTRONICS, V1, P612