PHOTOREFLECTANCE, ABSORPTION, AND NUCLEAR-RESONANCE REACTION STUDIES OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：41

作者：

HUANG, D ^{[1
]}

JI, G ^{[1
]}

REDDY, UK ^{[1
]}

MORKOC, H ^{[1
]}

XIONG, F ^{[1
]}

TOMBRELLO, TA ^{[1
]}

机构：

[1] CALTECH,DIV PHYS & ASTRON,PASADENA,CA 91125

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5447 / 5453

页数：7

共 38 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] SCREENING OF BOUND-STATE EXCITONS IN MODULATED REFLECTANCE [J].

ALBERS, WA .

PHYSICAL REVIEW LETTERS, 1969, 23 (08) :410-&

[3]

Andersen H. H., 1977, HYDROGEN STOPPING PO

[4]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[5] DEPENDENCE OF PHOTOREFLECTANCE ON SPACE CHARGE ELECTRIC FIELDS IN GE [J].

ASPNES, DE .

SOLID STATE COMMUNICATIONS, 1970, 8 (04) :267-&

[6] INTERBAND MASSES OF HIGHER INTERBAND CRITICAL-POINTS IN GE [J].

ASPNES, DE .

PHYSICAL REVIEW LETTERS, 1973, 31 (04) :230-233

[7] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].

ASPNES, DE ;

KELSO, SM ;

LOGAN, RA ;

BHAT, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767

[8] ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J].

BALDERESCHI, A ;

HESS, E ;

MASCHKE, K ;

NEUMANN, H ;

SCHULZE, KR ;

UNGER, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4709-4717

[9] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[10]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P192

← 1 2 3 4 →