DEPOSITION PARAMETERS AND FILM PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY HIGH-RATE DC PLANAR MAGNETRON REACTIVE SPUTTERING

被引：46

作者：

SAVVIDES, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4232 / 4238

页数：7

共 33 条

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