MAGNETIC-PROPERTIES OF BOUND HOLE STATES FOR COMPLEX NEUTRAL DEFECTS IN SEMICONDUCTORS

被引：28

作者：

MONEMAR, B ^{[1
]}

LINDEFELT, U ^{[1
]}

PISTOL, ME ^{[1
]}

机构：

[1] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

来源：

JOURNAL OF LUMINESCENCE | 1986年 / 36卷 / 03期

关键词：

D O I：

10.1016/0022-2313(86)90035-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：149 / 159

页数：11

共 32 条

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[7] NEUTRAL (CU-LI) COMPLEXES IN GAP - THE (CU-LI)V BOUND EXCITON AT 2.172 EV [J].

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[8] NEUTRAL (CU-LI) COMPLEXES IN GAP - THE (CU-LI)III BOUND EXCITON AT 2.242EV [J].

GISLASON, HP ;

MONEMAR, B ;

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DEAN, PJ ;

HERBERT, DC ;

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CAVENETT, BC .

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[9] NEUTRAL (CU-LI) COMPLEXES IN GAP - THE (CU-LI)I BOUND EXCITON AT 2.306 EV [J].

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MONEMAR, B ;

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