STUDY ON RADIATIVE EFFICIENCY IN ALGAINP/GAINP DOUBLE-HETEROSTRUCTURES - INFLUENCE OF DEEP LEVEL IN CLADDING LAYERS

We have studied the recombination process of carriers in AlGaInP/GaInP double heterostructures grown by metalorganic vapor phase epitaxy using time-resolved photoluminescence. We found that interfacial recombination is a major process in our samples. We have also studied the influence of the deep-level concentration in AlGaInP-cladding layers on interfacial recombination and found that reducing the deep level concentration from 10(15) to 10(13) cm-3 reduces the interfacial recombination velocity from 140 to 60 cm/s and improves the radiative efficiency. Our results suggest that carriers in the active layer recombine nonradiatively at the interfaces due to the deep level in cladding layers.