GUIDED-WAVE GAAS/ALGAAS FET OPTICAL MODULATOR BASED ON FREE-CARRIER-INDUCED BLEACHING

被引：5

作者：

ABELES, JH

CHAN, WK

KASTALSKY, A

HARBISON, JP

FLOREZ, LT

BHAT, R

机构：

[1] Bell Communications Research, Red, Bank, NJ, USA, Bell Communications Research, Red Bank, NJ, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

LIGHT - Modulators - SEMICONDUCTING GALLIUM COMPOUNDS - TRANSISTORS; FIELD EFFECT;

D O I：

10.1049/el:19870901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical modulators based on the free-carrier bleaching effect have been demonstrated. In these single-quantum-well FET optical modulator (FETOM) devices, the FET gate is self-aligned to a waveguide. They exhibit a 3:1 extinction ratio for a 10 v change in applied voltage to the gate electrode of a 750 mu m FETOM waveguide.

引用

页码：1302 / 1304

页数：3

共 3 条

[1] NOVEL SINGLE QUANTUM-WELL OPTOELECTRONIC DEVICES BASED ON EXCITON BLEACHING [J].