HIGH-FIELD HOLE TRANSPORT IN STRAINED INXGA1-XAS/GAAS MODULATION-DOPED QUANTUM-WELLS

被引：9

作者：

REDDY, M

GREY, R

CLAXTON, PA

WOODHEAD, J

机构：

[1] Dept. of Electron. and Electr. Eng., Sheffield Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The velocity-field characteristics of holes in strained p-modulation doped InxGa1-xAs quantum wells (x=0.17 and 0.13), grown on GaAs have been measured at 77 K. Two samples at each indium fraction were studied with different doping concentrations. Saturation is almost complete at a field of 4 kV cm-1, with drift velocities of around 4.9*10 6 cm s-1 for the low doped samples and 3.3*10 6 cm s-1 for the high doped. The latter are likely to be typical of structures used for p-type field-effect transistors (FETS). The authors believe that the performance of such devices will be limited by this very low saturation velocity.

引用

页码：628 / 630

页数：3

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