RESONANT TUNNELING IN A GAAS1-XPX-GAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE

被引：13

作者：

GAVRILOVIC, P

BROWN, JM

KALISKI, RW

HOLONYAK, N

HESS, K

LUDOWISE, MJ

DIETZE, WT

LEWIS, CR

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 52卷 / 03期

关键词：

Compendex;

D O I：

10.1016/0038-1098(84)90815-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SEMICONDUCTOR DEVICES

引用

页码：237 / 239

页数：3

共 12 条

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[2]

BROWN JM, 1984, UNPUB APPL PHYS LETT, V44

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[6] EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIES [J].

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[7] THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS [J].

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[8] OBSERVATION OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS1-0.25P0.25-GAAS STRAINED LAYER SUPER-LATTICE [J].

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[9] THE EFFECT OF TRIMETHYLALUMINUM CONCENTRATION ON THE INCORPORATION OF P IN ALXGA1-XPYAS1-Y GROWN BY ORGANO-METALLIC VAPOR-PHASE EPITAXY [J].

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[10] QUANTUM OSCILLATIONS IN STRAINED-LAYER SUPER-LATTICES [J].

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