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LASER-IRRADIATION EFFECTS ON THE INCORPORATION OF IMPURITIES IN GAAS DURING MOVPE GROWTH
被引：6
作者：
BAN, Y
TAKECHI, M
ISHIZAKI, M
MURATA, H
KUKIMOTO, H
机构：
[1] Tokyo Inst of Technology, Yokohama, Jpn, Tokyo Inst of Technology, Yokohama, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1986年
/
25卷
/
12期
关键词：
LASER BEAMS - Effects - LASERS;
EXCIMER - Applications - SEMICONDUCTOR MATERIALS - Growth;
D O I：
10.1143/JJAP.25.L967
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Laser-irradiation effects on the incorporation of n- and p-type impurities in GaAs have been studied by irradiating the substrate with an ArF excimer laser light during MOVPE growth. An n-type dopant source of TMSi is decomposed effectively by laser excitation, resulting in a dramatic increase in the carrier (electron) concentration. The decomposition of a p-type dopant source of DMZn is not influenced by laser irradiation at a growth temperature of 700 degree C. Si- or Zn-doped GaAs layers in the irradiated area are of high crystalline quality.
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页码：L967 / L969
页数：3
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