INSITU FABRICATION OF REPRODUCIBLE YBCO/AU PLANAR TUNNEL-JUNCTIONS WITH AN ARTIFICIAL MGO BARRIER

被引：19

作者：

FURUYAMA, M

IGUCHI, I

SHIRAI, K

KUSUMORI, T

OHTAKE, H

TOMURA, S

NASU, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, lbaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 03期

关键词：

High T[!sub]c[!/sub] tunnel junction; YBaCuO gap structure; YBCO/MgO/Au junction;

D O I：

10.1143/JJAP.29.L459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The in situ fabrication of YBCO (YBa2Cu3Oy)/MgO/Au epitaxial planar tunnel junctions with a thin MgO barrier utilizing an electron-beam coevaporation technique is reported. The thickness of the MgO barrier is 3–12 nm and the tunnel resistance shows a strong dependence on barrier thickness. The fabricated tunnel junctions are highly reproducible and controllable. The observed tunnel characteristics contain the gap opening at about 20 mV and the anomaly around zero bias. The tunnel characteristics using the degraded films are also reported. © 1990 The Japan Society of Applied Physics.

引用

页码：L459 / L462

页数：4

共 16 条

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