GROWTH-CONDITIONS OF HIGH-PURITY TIC SINGLE-CRYSTAL USING THE FLOATING ZONE METHOD

被引：7

作者：

OTANI, S

TANAKA, T

ISHIZAWA, Y

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(88)90425-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：8 / 12

页数：5

共 11 条

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[7] TEMPERATURE DISTRIBUTION IN CRYSTAL RODS WITH HIGH MELTING-POINTS PREPARED BY A RF FLOATING ZONE TECHNIQUE [J].

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[8] GROWTH OF SINGLE-CRYSTALS OF THE IVA GROUP TRANSITION-METAL CARBIDES BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

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[9] PREPARATION OF TICX SINGLE-CRYSTALS WITH MAXIMUM CARBON CONTENT BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

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[10] EVAPORATION FROM MOLTEN TICX [J].

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