HIGH-EFFICIENCY 35-GHZ GAAS-MESFETS

被引：3

作者：

TAYLOR, GC

ERON, M

BECHTLE, DW

LIU, SG

CAMISA, RL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/T-ED.1987.23079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1259 / 1263

页数：5

共 14 条

[1] EXTENDED MEASUREMENTS OF GALLIUM-ARSENIDE BREAKDOWN CHARACTERISTICS USING PUNCHTHROUGH STRUCTURES [J].

BALIGA, BJ ;

SEARS, AR ;

MENDITTO, P ;

CAMPBELL, PM .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :385-387

[2]

BECHTLE D, 1987, MTT INT S LAS VEGAS

[3] A FLIP-CHIP GAAS POWER FET WITH GATE AND DRAIN VIA CONNECTIONS [J].

CAMISA, RL ;

TAYLOR, G ;

REICHERT, W ;

CUOMO, F ;

BROWN, R .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) :118-120

[4] GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS [J].

DAVID, JPR ;

SITCH, JE ;

STERN, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1548-1552

[5]

DILORENZO JV, 1982, GAAS FET PRINCIPLES

[6] A PACKAGED 20-GHZ 1-W GAAS-MESFET WITH A NOVEL VIA-HOLE PLATED HEAT SINK STRUCTURE [J].

HIRACHI, Y ;

TAKEUCHI, Y ;

IGARASHI, M ;

KOSEMURA, K ;

YAMAMOTO, S .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) :309-316

[7] A 44 GHZ HEMT AMPLIFIER [J].

HSU, TI ;

SWIFT, G ;

GOEL, J ;

BERENZ, J ;

NAKANO, K .

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1986, 7 (07) :999-1004

[8] 44-GHZ MONOLITHIC GAAS-FET AMPLIFIER [J].

KIM, B ;

TSERNG, HQ ;

SHIH, HD .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :95-97

[9] OPTIMIZATION OF GAAS POWER MESFET DEVICE AND MATERIAL PARAMETERS FOR 15-GHZ OPERATION [J].

MACKSEY, HM ;

DOERBECK, FH ;

VAIL, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :467-471

[10] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J].

SAUNIER, P ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :503-505

← 1 2 →