PLASMA NITRIDING OF AL-99.5

被引:10
作者
CHEN, HY
STOCK, HR
MAYR, P
机构
来源
JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C7期
关键词
D O I
10.1051/jp4:19937150
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Aluminium nitride (AlN) is a very interesting ceramic because of its combination of properties such as high thermal stability, high hardness and an unusual combination of high thermal and low electrical conductivity. But it is very difficulty to obtain an AlN layer on the aluminium substrates by thermochemical nitriding process. Since a thin film of aluminium oxide existing on the surface of every aluminium substrate prevents the nitrogen atoms from diffusing into the aluminium lattice. However, it is possible to sputter the oxide film away from the aluminium surface in a glow discharge with the use of plasma nitriding technik and to allow the formation of AIN layer on the aluminium bulk. In the present work specimen of aluminium Al 99.5 has been plasma nitrided in a modified plasma nitriding unit, in which a diffusion pump was used to obtain an especially low partial pressure of oxygen in the vacuum chamber. The sputter-cleaning prior to the nitriding was conducted with the variation of the applied voltage and sputtering time. The plasma nitriding after sputtering was carried out in a glow discharge of pure nitrogen. The metallurgical properties of the AlN-Al-composites were characterized in detail. The results show that shiny black AlN layers with thickness up to a few micrometers have been created on the surface of aluminum and so the enhancement of wear and corrosion resistances of the substrate can be obtained.
引用
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页码:971 / 979
页数:9
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