CALCULATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY DIODES

被引：13

作者：

CHEN, I

LEE, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.93152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：487 / 489

页数：3

共 17 条

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[2]

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[3]

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[5]

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[8] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J].

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[9] DETERMINATION OF DEPLETION WIDTH IN AMORPHOUS MATERIALS USING A SIMPLE ANALYTICAL MODEL [J].

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[10] SCHOTTKY-BARRIER PROFILES IN AMORPHOUS SILICON-BASED MATERIALS [J].

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