HIGH-FREQUENCY PROPERTIES OF 4-TERMINAL FIELD-EFFECT TRANSISTORS

被引：3

作者：

COBBOLD, RSC

机构：

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1966年 / 113卷 / 01期

关键词：

D O I：

10.1049/piee.1966.0009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：73 / &

共 16 条

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[2]

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[3]

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[4]

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[5]

COBBOLD RSC, 1965, ELECTRONICS LETTERS, V1, P30

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[7] NEW MODES OF OPERATION FOR FIELD EFFECT DEVICES [J].

LATHAM, DC ;

HAMILTON, DJ ;

LINDHOLM, FA .

[8]

LATHAM DC, 1964, IEEE T ELECT DEV, VED11, P300

[9]

ONDERA GC, 1962, P I ELECT ELECTRONIC, V50, P1824

[10]

REDDY B, 1965, THESIS U SASKATCHEWA