RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON

被引：61

作者：

NARAYAN, J

HOLLAND, OW

EBY, RE

WORTMAN, JJ

OZGUZ, V

ROZGONYI, GA

机构：

[1] OAK RIDGE NATL LAB, DIV ANALYT CHEM, OAK RIDGE, TN 37830 USA

[2] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA

[3] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：957 / 959

页数：3

共 10 条

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[2] FLAME ANNEALING OF ARSENIC AND BORON IMPLANTED SILICON [J].

NARAYAN, J ;

YOUNG, RT .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :466-468

[3] SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SILICON [J].

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HOLLAND, OW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01) :225-236

[4]

Narayan J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P191

[5] STABILITY OF DISLOCATION LOOPS NEAR A FREE-SURFACE [J].

NARAYAN, J ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4862-4865

[6]

NARAYAN J, 1983, LASER SOLID INTERACT

[7]

PENNYCOOK SJ, UNPUB

[8]

REISS H, 1959, SEMICONDUCTORS, P220

[9] SHORT-TIME ANNEALING [J].

SEDGWICK, TO .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :484-493

[10]

TSAUR BY, 1981, APPL PHYS LETT, V39, P94

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