A FULLY PLANAR P-N-P HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：7

作者：

SUNDERLAND, DA ^{[1
]}

HADEN, JM ^{[1
]}

DZURKO, KM ^{[1
]}

STANCHINA, WE ^{[1
]}

LEE, HC ^{[1
]}

DANNER, AD ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,HUGHES RES LABS,MALIBU,CA 90265

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期

关键词：

D O I：

10.1109/55.2060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：116 / 118

页数：3

共 13 条

[1]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351, DOI [10 . 1007 / 978 - 1 - 4615 - 8636 - 4 _ 6, DOI 10.1007/978-1-4615-8636-4_6]

[2] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

CHAND, N ;

HENDERSON, T ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

GIACOLETTO, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :302-304

[3] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[4]

CHANG MF, 1987, 45TH DEV RES C SANT

[5]

DELYON T, 1987, 45TH DEV RES C SANT

[6]

GLEN RW, 1984, J CRYST GROWTH, V68, P450

[7] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J].

HUTCHBY, JA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :108-111

[8]

NAGATA K, 1987, 45TH DEV RES C SANT

[9]

SU LM, 1982, I PHYS C SER, V63, P551

[10] THE PERFORMANCE POTENTIAL OF P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

SUNDERLAND, DA ;

DAPKUS, PD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :648-651

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