MASKLESS DRY ETCHING OF GALLIUM-ARSENIDE WITH A SUB-MICRON LINEWIDTH BY LASER PYROLYSIS IN CCL4 GAS ATMOSPHERE

被引：14

作者：

TAKAI, M

TSUCHIMOTO, J

NAKAI, H

GAMO, K

NAMBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L852 / L854

页数：3

共 7 条

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BREWER, P ;

HALLE, S ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :475-477

[2] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[3] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[4] ION-BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION-BEAM [J].

GAMO, K ;

OCHIAI, Y ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12) :L792-L794

[5] LOCALIZED LASER ETCHING OF COMPOUND SEMICONDUCTORS IN AQUEOUS-SOLUTION [J].

OSGOOD, RM ;

SANCHEZRUBIO, A ;

EHRLICH, DJ ;

DANEU, V .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :391-393

[6] LASER-INDUCED LOCAL ETCHING OF GALLIUM-ARSENIDE IN GAS ATMOSPHERE [J].

TAKAI, M ;

TOKUDA, J ;

NAKAI, H ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L757-L759

[7]

TAKAI M, 1984, LASER CONTROLLED CHE

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