A STUDY OF VACANCY-TYPE DEFECTS BY POSITRON-LIFETIME MEASUREMENTS IN A II-VI SEMICONDUCTOR - CD0.2HG0.8TE

被引：14

作者：

GELY, C ^{[1
]}

CORBEL, C ^{[1
]}

TRIBOULET, R ^{[1
]}

机构：

[1] CNRS, PHYS SOLIDES LAB, F-92195 MEUDON, FRANCE

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 21期

关键词：

D O I：

10.1088/0953-8984/2/21/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Positron lifetime measurements in Cd0.2Hg0.8Te give direct evidence of the presence of monovacancies in samples annealed under Hg atmosphere. A single lifetime of pi =309 ps is detected and attributed to a monovacancy. It is proposed to be the doubly ionised mercury vacancy. Measurements in the 15-300 K temperature range show no charge state transition.

引用

页码：4763 / 4767

页数：5

共 13 条

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