INSITU SINGLE CHAMBER LASER PROCESSING OF YBA2CU3O7-DELTA SUPERCONDUCTING THIN-FILMS ON SI(100) WITH YTTRIA-STABILIZED ZIRCONIA BUFFER LAYERS

In situ pulsed excimer laser processing of high Tc YBa 2Cu3O7-δ films on Si (100) substrates with yttria-stabilized zirconia (YSZ) buffer layers, has been carried out for the first time using a multitarget deposition system. Both YSZ and YBa2Cu3O7-δ layers were deposited sequentially using a KrF excimer laser (λ=248 nm) at substrate temperature of 650°C. The morphology and structure of the buffer layers and YBa2Cu3O7-δ films were determined using x-ray diffraction and transmission electron microscopy techniques. The superconducting transition temperature Tc (onset) of 90 K and Tc0 (zero resistance) of 82 K were achieved for YBa 2Cu3O7-δ thin films on Si with YSZ buffer layers. An interesting result of this study was that good quality, highly textured YBa2Cu3O7-δ films with the c axis perpendicular to the substrate could be grown on single crystal as well as polycrystalline textured YSZ layers deposited on silicon substrates.