THIN-FILM MATERIALS EXPOSURE TO LOW-EARTH-ORBIT ABOARD SPACE-SHUTTLE

被引:9
作者
SYNOWICKI, RA [1 ]
HALE, JS [1 ]
SPADY, B [1 ]
REISER, M [1 ]
NAFIS, S [1 ]
WOOLLAM, JA [1 ]
机构
[1] UNIV NEBRASKA,CTR MICROELECTR & OPT MAT RES,LINCOLN,NE 68588
基金
美国国家航空航天局;
关键词
D O I
10.2514/3.26580
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
To study the effects of Atomic Oxygen on various thin film materials, fourteen thin film samples were exposed to the corrosive environment of low Earth orbit. Total exposure was 42 hours, resulting in a nominal atomic oxygen fluence of 2.2, x 10(20) atoms/cm(2). The films included aluminum, diamondlike carbon, diamond, and multilayer stacks. Included are experimental details of sample preparation, exposure, and post-flight results. Pre-flight characterization techniques included Variable Angle Spectroscopic Ellipsometry, optical reflectance and transmittance, Atomic Force Microscopy, and Raman scattering. Post-night analysis repeated pre-flight characterization. Aluminum films resisted degradation, Surface contaminants were identified using Auger Electron Spectroscopy, Contaminants were SiO2, fluorine, and sulfur which most likely result from degradation of cargo bay lining, waste water dumps, and outgassing. Diamondlike carbon films were completely etched away during exposure. Polycrystalline diamond films were extremely resistant to atomic oxygen degradation, showing no post-flight structural, compositional, or mass changes. Aluminum films 23.5 nm thick simultaneously protect silver reflecting layers from oxidation and increase the ultraviolet reflectance of the stack. Decreasing the aluminum thickness to 7.5 nm resulted in complete oxidation during exposure and failure as a protective coating.
引用
收藏
页码:97 / 102
页数:6
相关论文
共 14 条
[1]  
ALTEROVITZ SA, 1988, SOLID STATE TECHNOL, V31, P99
[2]   INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302
[3]  
AZZAM RMA, 1977, ELLIPSMETRY POLARIZE
[4]  
BRUNDLE RC, 1992, ENCY MATERIALS CHARA, P428
[5]  
DEGROH KK, 1990, NASA102557 TECH MEM
[6]  
GULINO DA, 1989, SURFACE MODIFICATION, V2, P73
[7]  
HALE JS, 1992, MATERIALS RES SOC, V36, P307
[8]   MSIS-86 THERMOSPHERIC MODEL [J].
HEDIN, AE .
JOURNAL OF GEOPHYSICAL RESEARCH-SPACE PHYSICS, 1987, 92 (A5) :4649-4662
[9]  
RUTLEDGE SK, 1986, NASA100122 TECH MEM
[10]  
SMITH RA, 1978, SEMICONDUCTORS+, P483