SHORT-CIRCUIT DIFFUSION OF BA, SR, AND O DURING ATIO(3) (A=BA, SR) THIN-FILM GROWTH BY THE HYDROTHERMAL-ELECTROCHEMICAL METHOD

被引：40

作者：

KAJIYOSHI, K ^{[1
]}

TOMONO, K ^{[1
]}

HAMAJI, Y ^{[1
]}

KASANAMI, T ^{[1
]}

YOSHIMURA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1111/j.1151-2916.1995.tb08847.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The mass transport mechanism during the hydrothermal-electrochemical growth of polycrystalline thin films of ATiO(3) (A = Ba, Sr) perovskite onto Ti electrodes in A(OH)(2) solutions has been studied by a tracer technique, using Ba and O-18 atoms as respective tracers for A-site and oxygen atoms in SrTiO3 host films. It was found that the ATiO(3) film grows at the film/electrode interface by transport of both A-site and oxygen atoms from the solution to the interface. A-site and oxygen atoms are considered to diffuse as constituents of solution species, such as A(2+), OH-, and H2O, through open short-circuit paths existing at grain boundaries.

引用

页码：1521 / 1531

页数：11

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