PASSIVE MODELOCKING OF SEMICONDUCTOR-LASERS WITH TUNABLE GROUP-VELOCITY DISPERSION CAVITY

被引：12

作者：

AZOUZ, A

STELMAKH, N

LOURTIOZ, JM

机构：

[1] Institut d'Electronique Fondamentale URA 22 du CNRS, 91405 Orsay Cedex, Universite Paris XI

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 16期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Passive (hybrid) modelocking of AlGaAs lasers in an external cavity with high tunable group-velocity-dispersion (GVD) is reported. An internal grating compressor is used to continuously vary the intracavity GVD while a second grating compressor serves to compress the output pulses. Modelocking is only found to occur for positive (normal) GVD. At optimum pulse compression, the dispersion of the external compressor is measured to linearly increase with intracavity dispersion. The large chirp amplitude detected at nearly-zero intracavity GVD as well as the general evolution of pulse parameters are shown to be well described by a modelocked laser model including fast laser pin saturation.

引用

页码：1437 / 1438

页数：2

共 9 条

[1]

AZOUZ A, UNPUB IEEE J QUANTUM

[2] HIGH-POWER ULTRAFAST LASER-DIODES [J].