MECHANISMS OF THE NEGATIVE-RESISTANCE CHARACTERISTICS IN AC THIN-FILM ELECTROLUMINESCENT DEVICES

被引：36

作者：

YANG, KWC ^{[1
]}

OWEN, SJT ^{[1
]}

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 05期

关键词：

D O I：

10.1109/T-ED.1983.21146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：452 / 459

页数：8

共 19 条

[1] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :50-54

[2] A SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES [J].

HOWARD, WE ;

SAHNI, O ;

ALT, PM .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :639-647

[3] HIGH-FIELD ELECTRONIC PROPERTIES OF SIO2 [J].

HUGHES, RC .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :251-258

[4] CHARGE-CARRIER TRANSPORT PHENOMENA IN AMORPHOUS SIO2 - DIRECT MEASUREMENT OF DRIFT MOBILITY AND LIFETIME [J].

HUGHES, RC .

PHYSICAL REVIEW LETTERS, 1973, 30 (26) :1333-1336

[5] PHYSICAL AND ELECTRICAL CHARACTERIZATION OF CO-DEPOSITED ZNS-MN ELECTROLUMINESCENT THIN-FILM STRUCTURES [J].

HURD, JM ;

KING, CN .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (06) :879-891

[6]

INOGUCHI T, 1974, 1974 SID INT S, P84

[7] MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE [J].

MARRELLO, V ;

RUHLE, W ;

ONTON, A .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :452-454

[8] ELECTROLUMINESCENCE EFFICIENCY PROFILES OF MN IN ZNS AC THIN-FILM ELECTROLUMINESCENCE DEVICES [J].

MARRELLO, V ;

ONTON, A .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :525-527

[9] DEPENDENCE OF ELECTRO-LUMINESCENCE EFFICIENCY AND MEMORY EFFECT ON MN CONCENTRATION IN ZNS-MN ACTEL DEVICES [J].

MARRELLO, V ;

ONTON, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1767-1770

[10] THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC [J].

ODWYER, JJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :3887-&

← 1 2 →