SUBNANOSECOND-PULSE GENERATOR WITH VARIABLE PULSEWIDTH USING AVALANCHE TRANSISTORS

被引:16
作者
REIN, HM
ZAHN, M
机构
[1] RUHR UNIV,INST ELEKTR,POSTFACH 2148,4630 BOCHUM,FED REP GER
[2] DORNIER SYST GMBH,POSTFACH 648,7990 FRIEDRICHSHAFEN,FED REP GER
关键词
D O I
10.1049/el:19750016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:21 / 23
页数:3
相关论文
共 6 条
[1]  
MITCHELL WB, 1968, ELECTRON DES, V6, P202
[2]  
PFEIFFER W, 1971, INT ELEKTRON RUNDSCH, V25, P268
[3]   INFLUENCE OF BASE SPREADING RESISTANCE AND CHARGE CARRIER MULTIPLICATION ON INITIAL FAMILY OF CHARACTERISTICS OF PLANAR TRANSISTORS [J].
REIN, HM ;
SCHAD, T ;
ZUHLKE, R .
SOLID-STATE ELECTRONICS, 1972, 15 (05) :481-+
[4]  
REIN HM, TO BE PUBLISHED
[5]  
REIN HM, 1967, DISKUSSIONSSITZUNG N
[6]  
ZAHN M, 1967, THESIS U STUTTGART