HIGH-POWER, STRAINED-LAYER AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS

被引：118

作者：

KINTZER, ES

WALPOLE, JN

CHINN, SR

WANG, CA

MISSAGGIA, LJ

机构：

[1] Lincoln Laboratory, Massachusetts Institute of technology, Lexington

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期

关键词：

D O I：

10.1109/68.219683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor devices with a tapered gain region have been developed that have high CW power and good spatial mode quality. Output as high as 3.5 W from a tapered amplifier and 4.2 W from a tapered laser has been achieved.

引用

页码：605 / 608

页数：4

共 11 条

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[9] HIGH-POWER STRAINED-LAYER INGAAS/ALGAAS TAPERED TRAVELING-WAVE AMPLIFIER [J].

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[10]

WALPOLE JN, P CLEO 92

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