IMPURITY STATES IN DOPED TRANS-POLYACETYLENE

被引:41
作者
BRYANT, GW
GLICK, AJ
机构
[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742
[2] WEIZMANN INST SCI,IL-76100 REHOVOT,ISRAEL
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 10期
关键词
D O I
10.1103/PhysRevB.26.5855
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5855 / 5866
页数:12
相关论文
共 19 条
[1]   SINGULAR POTENTIALS IN ONE DIMENSION [J].
ANDREWS, M .
AMERICAN JOURNAL OF PHYSICS, 1976, 44 (11) :1064-1066
[2]   THE IMPORTANCE OF IMPURITY STATES IN DOPED TRANS-POLYACETYLENE [J].
BRYANT, GW ;
GLICK, AJ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13) :L391-L396
[3]  
CAMPBELL DK, 1981, PHYS REV B, V24, P4859, DOI 10.1103/PhysRevB.24.4859
[4]   ELECTRICAL-CONDUCTIVITY IN DOPED POLYACETYLENE [J].
CHIANG, CK ;
FINCHER, CR ;
PARK, YW ;
HEEGER, AJ ;
SHIRAKAWA, H ;
LOUIS, EJ ;
GAU, SC ;
MACDIARMID, AG .
PHYSICAL REVIEW LETTERS, 1977, 39 (17) :1098-1101
[5]   DONOR AND ACCEPTOR STATES IN LIGHTLY DOPED POLYACETYLENE, (CH)X [J].
FINCHER, CR ;
OZAKI, M ;
HEEGER, AJ ;
MACDIARMID, AG .
PHYSICAL REVIEW B, 1979, 19 (08) :4140-4148
[6]  
KARASZ FE, 1982, B AM PHYS SOC, V37, P167
[7]   INVESTIGATION ON THE DOPING OF POLYACETYLENE FILMS [J].
KIESS, H ;
MEYER, W ;
BAERISWYL, D ;
HARBEKE, G .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :763-781
[8]  
Loudon R., 1959, AM J PHYS, V27, P649, DOI DOI 10.1119/1.1934950
[9]   SEMICONDUCTOR-METAL TRANSITION IN DOPED POLYACETYLENE [J].
MELE, EJ ;
RICE, MJ .
PHYSICAL REVIEW B, 1981, 23 (10) :5397-5412
[10]   CHARGED II-PHASE KINKS IN LIGHTLY DOPED POLYACETYLENE [J].
RICE, MJ .
PHYSICS LETTERS A, 1979, 71 (01) :152-154