ELECTRONIC-STRUCTURE OF SIMPLE DEEP-LEVEL DEFECTS IN SEMICONDUCTORS

被引:35
作者
SCHEFFLER, M
机构
来源
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1982年 / 22卷
关键词
D O I
10.1007/BFb0107937
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:115 / 148
页数:34
相关论文
共 116 条
[1]  
ALMASSY RJ, 1978, I PHYS C SER, V45, P190
[2]   NONLOCAL APPROXIMATION TO EXCHANGE POTENTIAL AND KINETIC-ENERGY OF AN INHOMOGENEOUS ELECTRON-GAS [J].
ALONSO, JA ;
GIRIFALCO, LA .
PHYSICAL REVIEW B, 1978, 17 (10) :3735-3743
[3]  
ALTERELLI M, 1982, HDB SEMICONDUCTORS, V1, P269
[4]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[5]  
[Anonymous], 1981, POINT DEFECTS SEMICO
[6]   STRUCTURAL-ENERGY CALCULATIONS BASED ON NORM-CONSERVING PSEUDOPOTENTIALS AND LOCALIZED GAUSSIAN-ORBITALS [J].
BACHELET, GB ;
GREENSIDE, HS ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (08) :4745-4752
[7]   SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J].
BACHELET, GB ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (02) :915-925
[8]  
BACHELET GB, UNPUB
[9]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[10]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686