NUMERICAL SIMULATIONS OF CZOCHRALSKI SILICON GROWTH

被引：18

作者：

CHAN, YT

GIBELING, HJ

GRUBIN, HL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1425 / 1439

页数：15

共 29 条

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