CARRIER GAS-FREE CHEMICAL VAPOR-DEPOSITION TECHNIQUE FOR INSITU PREPARATION OF HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS

被引：24

作者：

SCHULTE, B ^{[1
]}

MAUL, M ^{[1
]}

BECKER, W ^{[1
]}

SCHLOSSER, EG ^{[1
]}

ELSCHNER, S ^{[1
]}

HAUSSLER, P ^{[1
]}

ADRIAN, H ^{[1
]}

机构：

[1] TH DARMSTADT,INST FESTKORPERPHYS,W-6100 DARMSTADT,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new carrier gas-free metalorganic chemical vapor deposition technique was developed yielding a high deposition rate. The beta-dicetonate precursor compounds were synthesized with reproducible water content which is of great importance for their vapor pressure. With the technique described above c-axis oriented YBa2Cu3O7-delta thin films were prepared with T(c)(R = 0) = 91.8 K and j(c)(77 K) = 1.3 X 10(6) A/cm2 on (100)SrTiO3 substrates and T(c)(R = 0) = 91.1 K and j(c)(77 K) = 3 X 10(5) A/cm2 on (100)MgO substrates at B = 0 T. The influence of the metal composition on the formation of precipitation was studied by SEM investigations.

引用

页码：869 / 871

页数：3

共 5 条

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